AMCC922NE analog power preliminary publication order number: ds-AMCC922NE_b 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. dual n-channel logical level mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe dfn 3x3 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units v ds 20 v gs 8 t a =25 o c 8.2 t a =70 o c 6.7 i dm 40 i s 1.5 a t a =25 o c 1.5 t a =70 o c 1.0 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbol typ max t <= 10 sec 72 83 steady state 100 120 thermal resistance ratings maximum junction-to-ambient a o c/w r thja parameter esd protected 2000v v ds (v) r ds(on) (ohm) i d (a) 0.015 @ v gs = 4.5 v 8.2 0.018 @ v gs = 2.5v 7.5 20 product summary dfn 3x3 top view s1 g1 s2 12 3 4 g2 dd d 87 6 5 d d g 2 n-cha nne l mo sf et s 2 d g 1 n- ch ann el mo s fet s 1
AMCC922NE analog power preliminary publication order number: ds-AMCC922NE_b 2 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing . analog power (apl) reserves the right to make changes without fu rther notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitabili ty of its products for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, a nd specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in apl data sheets and/or specifica tions can and do vary in different applications and actual performance may vary over t ime. all operating parameters, including ?typicals ? must be validated for each customer application by customer?s technical experts. apl d oes not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as co mponents in systems intended for surgical implant i nto the body, or other applications intended to support or sustain life, or for any oth er application in which the failure of the apl prod uct could create a situation where personal injury or death may occur. should buyer purchase o r use apl products for any such unintended or unaut horized application, buyer shall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmles s against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal i njury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v gs = v ds , i d = 250 ua 0.4 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = 16 v, v gs = 0 v 1 ua v ds = 16 v, v gs = 0 v, t j = 55 o c 10 ua on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 30 a v gs = 4.5 v, i d = 2 a 0.015 v gs = 2.5 v, i d = 2 a 0.018 forward tranconductance a g fs v ds = 10 v, i d = 2 a 25 s diode forward voltage a v sd i s = 2 a, v gs = 0 v 0.89 v total gate charge q g 13.4 gate-source charge q gs 0.9 gate-drain charge q gd 2.0 turn-on delay time t d(on) 18 rise time t r 25 turn-off delay time t d(off) 50 fall-time t f 25 specifications (t a = 25 o c unless otherwise noted) paramete r symbol test conditions unit dynamic b v ds =10v, v gs =4.5v, i d =2a nc v dd =10v, v gs =4.5v, i d =1a , r g e n =10 ns static zero gate voltage drain current i dss drain-source on-resistance a r ds(on)
AMCC922NE analog power preliminary publication order number: ds-AMCC922NE_b 3 typical electrical characteristics (n-channel) output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v ds , drain-source voltage (v) i d , drain current (a) 3.5v 2.5v 2.0v v gs = 10.0v 4.5v 3.0v 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 3.5 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 5 10 15 20 25 30 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.0v 3.5v 3.0v 4.5v 2.5v 10.0v 4.0v 0 300 600 900 0 4 8 12 16 20 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 4.5a v ds = 5v 15v 10v 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 4.5a v gs = 10v
AMCC922NE analog power preliminary publication order number: ds-AMCC922NE_b 4 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature (oc) -vth, gate-source thresthold voltage (v) vds = vgs id = -250ma typical electrical characteristics (n-channel) normalized thermal transient junction to ambient single pulse power, junction-to-ambient vth gate to source voltage vs temperature source-drain diode forward voltage on-resistance vs . gate-to-source voltage 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v 0.01 0.03 0.05 0.07 0.09 0 2 4 6 8 10 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 2.25a t a = 125 o c t a = 25 o c 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 208c/w t a = 25c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja =208 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5
AMCC922NE analog power preliminary publication order number: ds-AMCC922NE_b package information 5
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